WhoangIntae1
ChoChinkwan1
HongJin Hee1
SonDong Hee1
LimByung Yoon1
KimJin Pyung1
BangKijun1
-
(SK hynix, Icheon, 17336, Korea)
Copyright © The Institute of Electronics and Information Engineers(IEIE)
Index Terms
WLP, TSV, HBM, deep learning, segmentation, chemical vapor deposition film
I. INTRODUCTION
The SiN/SiO$_{2}$ film deposition process, as shown in Fig. 1, is a passivation film created to protect the device after Through Silicon Via (TSV)
protrusion in the WLPKG TSV SI Dry Etch process. In order to determine whether the
process is abnormal after the process and whether the process can proceed, a total
for every single wafer inspection is performed. After total inspection, lot flow has
been established after manual verification by line operators based on defective limit
samples, as shown in Fig. 2 showing which defect modes can be waived and which wafers should be scraped, and
as a result of the SiN/SiO$_{2}$ film process defective history investigation, 69%
of the false negative case had occurred resulting in unnecessary simple work loss
such as re-verification defect by engineers. Moreover, the turnaround time for manufacturing
HBM devices has increased, and human error risk due to unexamined defects has occurred
during the manual verification process.
Therefore, in this study, we introduce a technique for automatically detecting defects
in the inspection step image using two deep-learning segmentation models and try to
prove its performance through experiments. It aims to detect defective areas more
accurately and reduce the over-inspection rate, further promoting unmanned inspection
verification work to reduce the overall turnaround time, human error risks, and unnecessary
simple work loss.
Fig. 1. TSV Process Flow & SiN/SiO$_{2}$ Film Dep.
Fig. 2. Defective Limit Samples.
II. RELATED RESEARCH: DEEP LEARNING SEGMENTATION MODELS
1. Class Activation Mapping (CAM)
In Convolution Neural Network (CNN) classification model, the moment the last convolutional
layer flattens the output and passes it to the fully connected layer, the information
held by the filter disappears. However, the last filter of the CNN can be preserved
by using Global Average Pooling (GAP) instead of flattening. On the CAM model, like
a normal CNN architect, class prediction is made from softmax output through a fully
connected layer with weights from the last convolution and fully connected layers.
Weights from the fully connected layer become the feature weight of each class, and
each weight has a feature vector from each class. As a result, once the feature map
from the last convolution layer and weights from the fully connected layer are multiplied,
the image made from the Class Activation Mapping (CAM) model shows which area of the
image helps to classify with a given class. The expression of the area of class objects
through the preserved filter is regarded as a defect. CAM can extract defects through
unsupervised learning if sufficient accuracy of the CNN classification model is secured.
Since CNN model is known as the most powerful tool for an image classification, we
consider CAM model to be both effective defect classifier and segmentation extractor.
2. U-Net
U-Net is End-to-End, fully convolutional network-based model. As shown in Fig. 4, it was named U-Net because of the shape of the network (‘U’). It has shown good
performance in the field of tumor detection with a small amount of training data in
medical electron microscopy images. Moreover, the segmentation image made by this
network also has the advantage of being sophisticated. To collect overall context
information of the image and exact localization, the architect of U-Net is symmetrical.
On the left side of the U-Net architect shown in Fig. 4, the contracting path is to downsample the given image by using a normal CNN layer.
With a contracting path, image context can be extracted. On the right side of the
U-Net architect, expanding path is to localize the given context.
As cell image shown at Fig. 4, medical electron microscopy image looks similar with wafer image we’re dealing with.
Moreover, as suggested on U-Net paper [1] shown 30 images with excessive augmentation successfully trained U-Net model which
is similar to our circumstance, we consider U-Net to be suitable for semiconductor
field. However, to train U-Net model, only supervised learning is possible with a
label mask produced.
Fig. 4. U-Net Architect [1].
III. EXPERIMENT
1. Data Collection and Preprocessing
For data collection, all verified defect lot lists were collected at the SiN/SiO$_{2}$
film deposition inspection step performed on the SK hynix WLPKG TSV Line, from the
defect list, true negative defect images were selected by the process engineer in
charge. After defect images were selected, we transformed imaged to be grayscale and
resized image to 256x256x1. To train the CNN defect classification model for CAM,
we augmented total of 22 defect images to 472 images in order for the CNN model to
train various types of defect modes and to solve the imbalance problem of the dataset.
Since augmented images were made by flipping and shifting, the wafer lookalike images
were produced with the region of the defect itself was changed. Based on the domain
knowledge of the process engineer in charge of the collected defect image and the
defective limit sample, ground truth segmentation was performed, as shown in Fig. 5, after the defective label to create a segmentation mask for the defective image.
Fig. 5. Defective Image Preprocessing for U-Net Example.
2. Model Fitting
Prior to performing CAM, it is necessary to secure a high-performance CNN model. CAM
was implemented with ResNet architect, which has the highest performance record among
existing image classification models. Due to the nature of P&T, defect image is very
rare. In order to solve data imbalance between normal/defect images, as shown on Table 1, defect images were augmented from 4 images to 328 images for training model, from
8 images to 64 images for validating model, and from 10 images to 80 images for test
model to train CNN model.
And for U-Net model, since we had to train only segmentation mask for defect region,
we augmented 58 defect and segmentation mask images to 6000 images by using Keras.ImageDataGenerator
with argument as following: 0.2 rotation, 0.05 width & height shift, 0.05 shear, 0.05
zoom range, horizontal & vertical flip and fill mode so that location of defect-like
image on wafer varied as shown on Fig. 6.
After augmented defect images, we trained the CNN model with a train and valid data
set with 1,000 epochs. Since we lacked defect images, we used pretrained ResNet-50
with binary classification instead of multi-class classification for CNN model and
we could get 96.8% for test accuracy. After training, we changed the architect of
the CNN model by changing the flattened layer to a global average pooling layer which
helped us to get a segmentation image of the defect.
For U-Net training, we used same network structure from U-Net paper shown on Fig. 4 but changed size of first layer of network since we used 256x256x1 image. Also, we
only used defect images with segment masks for training. While training, we used binary
cross entropy as a loss function and set 10,000 epochs. As we trained the model, we
found although loss from binary cross entropy was well saturated with the Mean IoU
value grown, after a certain point, loss stopped falling, and the Mean IoU value stopped
increasing, which we found our model was well saturated as shown in Fig. 7.
While training the U-Net model, we checked if the model was well trained by making
a segmentation image from the model we trained. With certain points with binary cross
entropy and mean IoU were not fallen, although early stopping paused training, we
found the model had to be trained more because segmentation images were not clear
before saturation, as shown in Fig. 8.
For segmentation image made by CAM model, to compare with segmentation image with
U-Net model properly, we converted image to grayscale image.
After both CAM model and U-Net model were trained, we could get segmentation image
of defect areas.
Fig. 6. Augmented Image Example.
Fig. 7. Training U-Net Model.
Table 1. Collected Defective Image Amount
|
CAM
|
U-Net
|
Train
|
Valid
|
Test
|
Ground
|
Mask
|
Fail
|
4 → 328
|
8 → 64
|
10 → 80
|
Each 58 → 6000
|
Pass
|
360
|
73
|
87
|
N/A
(→ : Augmentation)
|
|
Total 992
|
Table 2. Learning Plan
|
CAM
|
U-Net
|
Epoch
Best Eval
Remark
|
1,000
Test Acc = 96.8%
ResNet
|
10,000
IoU = 75.3 %
Keras.ImageGen
|
IV. EXPERIMENT RESULT
As shown in Fig. 9, we found that the CAM and U-Net models can create a segmentation image of the defect
area. In the segmentation image created from both models with the same defect image,
the ground truth mask and segmentation image of U-Net result in the defective area
fitting into a narrower range. However, in the CAM segmentation image, it was confirmed
that a wider area and even non-defective areas were determined as defective areas,
which showed both models could be used for defect detection for our inspection image.
Although CAM could only show approximate location with a lack of accuracy, CAM had
a certain advantage of using unsupervised learning, which didn’t need to create a
ground truth mask. Since creating ground truth requires quite an amount of time, it
will be helpful to train with only normal/defect labels of images, saving time in
building a defect image detector.
On the other hand, although making ground truth masks takes lots of time, due to the
U-Net model has trained with ground truth masks with defect image, U-Net showed better
segmentation image of the defect. Moreover, As shown in Fig. 8, not only the delamination defect area of the film but also the void area, the last
input image on the right side of Fig. 8, which was normally unexamined from manual inspection, was well detected and created
a segmentation image of the defect area.
To compare the performance of the two generated segmentation models, Jaccard Similarity,
which measures the similarity of the entire image, and Mean IoU, which the similarity
of the segmentation, were used. As shown in Table 3, Both Jaccard Similarity and Mean IoU value for U-Net were evaluated to be higher
compared to CAM segmented image.
Fig. 8. U-Net Segmentation Image Result.
Fig. 9. CAM vs. U-Net Segmentation Image.
Table 3. Testing Result
|
CAM
|
U-Net
|
Jaccard Similarity
|
0.960
|
0.995
|
Mean IoU
|
0.036
|
0.370
|
V. CONCLUSION
In this paper, a segmentation model for SK hynix WLPKG TSV line SiN/SiO$_{2}$ film
deposition process was constructed to detect the defective area of the inspected defective
image. Through ResNet-CAM Model and U-Net Model, it was possible to obtain segmentation
images of defective areas in both models, but we were confirmed that the results of
segmentation images through U-Net were superior to ResNet-CAM. In addition, it is
possible to detect void areas of SiN/SiO$_{2}$ film that were difficult to verify
in the manual verification in the past, and it is confirmed that small size void,
which can be verified as not defect, was ignored on the segmented image, which will
help to contribute unexamined or over-examined rate reduction.
Moreover, it will be possible to secure additional reliability for U-Net-based segmentation
images by further learning about defective images collected additionally in the future
and creating a model for each defect type and also be possible to detect the defective
area at similar inspection steps, such as photo process photoresist inspection. When
securing the model's reliability through securing the added image, it will be possible
to automate the existing manual verification method by establishing and applying the
real-time verifier system.
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Intae Whoang received the B.S degree in Industrial Engineering from Purdue University,
Indiana, United States of America in 2017. He joined SK hynix Inc., Icheon, Korea,
in 2018, where he has been working in wafer level packaging technology team. His research
interest is process optimization and development for thinfilm and dry etch process
to enhance productivity and to reduce cost of HBM products.
Chinkwan Cho received the Computer Science B.S & MBA in Dongguk and Yonsei University
respectively. He joined SK hynix Inc., Icheon and designed and developed many kinds
of data analysis system for memory semiconductor product manufacturing since 2007.
He is still working on finding the best solution for sensing and amplifying the micro-variance
of operation data to predict the evaluation result.
Jin Hee Hong received the B.S degree in Material Engineering from Sungkyunkwan
University, Suwon, South Korea in 2017. She joined SK hynix Inc., Icheon, Korea, in
2018, where she has been working in wafer level packaging technology team. Her research
interest is improving efficiency of thinfilm equipment to enhance productivity and
reduce cost of HBM products.
Dong Hee Son received the B.S degree in Aero Space Engineering from Inha University,
Incheon, South Korea in 2017. He joined SK hynix Inc., Icheon Korea, in 2018, where
he has been working in wafer level packaging technology team. His research interest
is improving efficiency of dry etch equipment to enhance productivity and reduce cost
of HBM products.
Byung Yoon Lim received the B.S degree in Mechanical and Material Engineering
from The Australian National University, Canberra, Australia in 2014. He joined SK
hynix Inc., Icheon Korea, in 2018, where he has been working in wafer level packaging
technology team. His research interest is improving efficiency of dry etch equipment
to enhance productivity and reduce cost of HBM products.
Jin Pyung Kim received the B.S degree in Electrical Engineering from Chung-Ang
University, Seoul, South Korea in 2013. He joined SK hynix Inc., Icheon, Korea, in
2013, where he has been working in advanced package development team. His research
interest is yield enhancement for HBM products.
Ki-jun Bang received the B.S degree in Electronic Control Engineering from Kumoh
National Institute of Technology, Gumi, South Korea. He Joined SK hynix Inc., Icheon,
Korea, in 2006 and has been working in wafer level packaging technology team since
2009. He is currently research manager of the photo, dry etch, and thinfilm process.