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“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

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REFERENCES

1 
Choi W. Y., et al , Aug. 2007, Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec, IEEE Electron Device Lett., Vol. 28, pp. 743-745DOI
2 
Patel N., Ramesha A., Dec. 2008, Drive current boosting of ntype tunnel FET with strained SiGe layer at source, Microelectronics Journal, Vol. 39, pp. 1671-1677DOI
3 
Lee M., et al , Oct. 2011, Driving Current Enhancement of Strained Ge (110) p-Type Tunnel FETs and Anisotropic Effect, IEEE Electron Device Lett., Vol. 32, pp. 1355-1357DOI
4 
Moselund K., et al , Oct. 2012, InAs–Si Nanowire Heterojunction Tunnel FETs, IEEE Electron Device Lett., Vol. 33, pp. 1453-1455DOI
5 
Zhou G., et al , Jun. 2012, InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and ION/IOFF Ratio Near 106, IEEE Electron Device Lett., Vol. 33, pp. 782-784DOI
6 
Wang W., et al , Jan. 2014, Design of U-Shape Channel Tunnel FETs With SiGe Source Regions, IEEE Trans. Electron Devices, Vol. 61, pp. 193-197DOI
7 
Herzog H. J., et al , Dec. 2000, SiGe-based FETs:buffer issues and device results, Thin Solid Films, Vol. 380, pp. 36-41DOI
8 
Dube A., et al , 2016, Strain Relaxed Silicon Germanium Buffer Layers: From Growth to Integration Challenges, ECS Transactions, Vol. 75, No. 8, pp. 599-604DOI
9 
Witters L., et al , Nov. 2017, Strained Geranium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition, IEEE Trans. Electron Devices, Vol. 64, pp. 4587-4593DOI
10 
Kim S. H., et al , Jul. 2010, Impact of Body Doping and Thickness on the Performance of Germanium-Source TFETs, IEEE Trans. Electron Devices, Vol. 57, pp. 1710-1713DOI
11 
Lee J., et al , Jun. 2016, Analysis on temperature dependent current mechanism of tunnel field-effect transistors, Japanese Journal of Applied Physics, Vol. 55, No. 6S1, pp. 06GG03-1-06GG03-4DOI
12 
Chattopadhyay A., Mallik A., Mar. 2011, Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor, IEEE Trans. Electron Devices, Vol. 58, pp. 677-683DOI