Mobile QR Code QR CODE

“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

※ The user interface design of www.jsts.org has been recently revised and updated. Please contact inter@theieie.org for any inquiries regarding paper submission.

Journal Search

  1. Home
  2. Archive
  3. 2020-02 (Vol.20 No.01)
  4. 10.5573/JSTS.2020.20.1.008
XML PDF INFO REF

REFERENCES

1 
Wong H-S. Philip, et al. , Dec 2010, Phase change memory, Proceedings of the IEEE, Vol. 98, No. 12, pp. 2201-2227DOI
2 
Aluguri Rakesh, Tseng Tseung-Yuen, Sep 2016, Overview of selector devices for 3-D stackable cross point RRAM arrays, IEEE Journal of the Electron Devices Society, Vol. 4, No. 5, pp. 294-306DOI
3 
Ovshinsky Stanford R., Fritzsche Hellmut, Feb 1973, Amorphous semiconductors for switching, memory, and imaging applications, IEEE Transactions on Electron Devices, Vol. 20, No. 2, pp. 91-105DOI
4 
Govoreanu Bogdan, et al. , June 2017, Thermally stable integrated Se-based OTS selectors with> 20 MA/cm 2 current drive,> 3.10 3 half-bias nonlinearity, tunable threshold voltage and excellent endurance, 2017 Symposium on VLSI Technology, IEEE, pp. T92-T93DOI
5 
Koo Yunmo, et al. , May 2017, Simple binary Ovonic threshold switching material SiTe and its excellent selector performance for high-density memory array application, IEEE Electron Device Letters, Vol. 38, No. 5, pp. 568-571DOI
6 
Manivannan Anbarasu, et al. , Dec 2014, Low power ovonic threshold switching characteristics of thin GeTe6 films using conductive atomic force microscopy, Applied Physics Letters, Vol. 105, No. 24, pp. 243501DOI