Mobile QR Code QR CODE

“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

※ The user interface design of www.jsts.org has been recently revised and updated. Please contact inter@theieie.org for any inquiries regarding paper submission.

Journal Search

  1. Home
  2. Archive
  3. 2022-02 (Vol.22 No.01)
  4. 10.5573/JSTS.2022.22.1.24
XML PDF INFO REF

REFERENCES

1 
Lee J. H., Nam W. ., Kim B. K., Choi H. S., Ha Y. M., Han M. K., 2006, A new poly-Si TFT current-mirror pixel for active matrix organic light emitting diode, IEEE Electron Device Letters, Vol. 27, No. 10, pp. 830-833DOI
2 
Goncalves G., Barquinha P., Raniero L., Martins R., Fortunato E., 2008, Crystallization of amorphous indium zinc oxide thin films produced by radio-frequency magnetron sputtering, Thin Solid Films}, Vol. 516, No. 7, pp. 1374-1376DOI
3 
Kim C., Dec. 2012, Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors, Appl. Phys. Lett., Vol. 252103, No. 2009, pp. 1-4DOI
4 
Gao Y., Li X., Chen L., Shi J., Sun X.W., Zhang J., 2014, High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ZrO2 Gate Dielectric, IEEE Electron Device Letters, Vol. 35, No. 5, pp. 554-556DOI
5 
Kim J. H., Chang J., Kim S., Park B.-G., 2019, Oxide Thin Film Transistor With a Novel Gate Insulator Stack to Suppress Photo-Excited Charge Injection, IEEE Transactions on Nanotechnology, Vol. 18, pp. 491-493DOI
6 
Abliz A., 2020, Investigation of the electrical properties and stability of HfInZnO thin-film transistors, Chinese Journal of Physics, Vol. 68, pp. 788-795DOI
7 
Chong E., Jo K. C., Lee S. Y., Apr. 2010., High stability of amorphous hafnium-indium-zinc-oxide thin film transistor, Applied Physics Letters, Vol. 96, No. 15, pp. 152102DOI
8 
Park J. S., Jun. 2010., The influence of SiOx and SiNx passivation on the negative bias stability of Hf-In-Zn-O thin film transistors under illumination, Applied Physics Letters, Vol. 96, No. 26, pp. 262109DOI
9 
Park J. S., 2010, Influence of illumination on the negative-bias stability of transparent hafniumindiumzinc oxide thin-film transistors, IEEE Electron Device Letters, Vol. 31, No. 5, pp. 440-442DOI
10 
Shin J. H., Feb. 2009, Light effects on the bias stability of transparent ZnO thin film transistors, ETRI Journal, Vol. 31, No. 1, pp. 62-63DOI
11 
Kwon D. W., 2010, Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor, Applied Physics Letters, Vol. 97, No. 19DOI
12 
Kim J. H., 2011, Investigation on the characteristics of stress-induced hump in amorphous oxide thin film transistors, Applied Physics Letters, Vol. 99, No. 4DOI
13 
Kwon D. W., Kim J. H., Park B. G., 2017, The effect of drain bias stress on the instability of turned-OFF amorphous HfInZnO thin-film transistors under light irradiation, IEEE Transactions on Electron Devices, Vol. 64, No. 1, pp. 153-158DOI
14 
Andricciola P., Tuinhout H. P., 2009, The temperature dependence of mismatch in deep-submicrometer bulk MOSFETs, IEEE Electron Device Letters, Vol. 30, No. 6, pp. 690-692DOI
15 
Song I., 2008, Short channel characteristics of gallium-indium-zinc-oxide thin film transistors for three-dimensional stacking memory, IEEE Electron Device Letters, Vol. 29, No. 6, pp. 549-552DOI
16 
Larson J. M., Snyder J. P., 2006, Overview and status of metal S/D Schottky-barrier MOSFET technology, IEEE Transactions on Electron Devices, Vol. 53, No. 5, pp. 1048-1058DOI
17 
Zhu S., 2011, CMOS technology: Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode, Selected Semiconductor Research, Vol. 25, No. 5, pp. 330-332DOI
18 
Zhu S., 2004, N-type Schottky barrier source/drain MOSFET using Ytterbium silicide, IEEE Electron Device Letters, Vol. 25, No. 8, pp. 565-567DOI
19 
Lee S., Mar. 2010., Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors, Applied Physics Letters, Vol. 96, No. 11, pp. 113506DOI
20 
Silvaco Inc. , 2016, Atlas User’s Manual, Silvaco Inc.Google Search