Mobile QR Code QR CODE

References

1 
N. On et al., “Hot Carrier Effect in Self-Aligned In-Ga-Zn-O Thin-Film Transistors with Short Channel Length,” IEEE Transactions on Electronic Devices, Vol. 67, No. 12, pp. 5544-5551, Dec., 2020.DOI
2 
H. J. Kim et al., “Channel defect analysis method of a-igzo tfts on polyimide for flexible displays,” Journal of Semiconductor Technology and Science, Vol. 20, No. 5, pp. 474-478, Oct., 2020.DOI
3 
E. Fortunato, P. Barquinha, and R. Martins, “Oxide semiconductor thin-film transistors: A review of recent advances,” Advanced Materials, Vol. 24, No. 22. pp. 2945-2986, Jun., 2012.DOI
4 
J. K. Jeong, “The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays,” Semiconductor Science and Technology, Vol. 26, No. 3, Mar., 2011.DOI
5 
J. Park et al., “Effect of Positive Bias Stress on the Back-Gate Voltage-Modulated Threshold Voltage in Double-Gate Amorphous InGaZnO Thin-Film Transistors,” IEEE Electron Device Letters, Vol. 43, No. 11, pp. 1878-1881, Nov., 2022.DOI
6 
K. Abe, K. Ota, and T. Kuwagaki, “Simulation Study of Self-Heating and Edge Effects on Oxide-Semiconductor TFTs: Channel-Width Dependence,” in Proceedings of the International Display Workshops, Vol. 26, pp. 461-464. Nov., 2019.DOI
7 
A. Perinot, M. Giorgio, and M. Caironi, “Flexible Carbon-based Electronics,” (Eds: P. Samorí, V. Palermo), Wiley-VCH, Weinheim, Germany, Vol. 71, Oct., 2018.URL
8 
M. Fujii et al., “Experimental and Theoretical Analysis of Degradation in Ga2O3 -In2O3 -ZnO Thin-Film Transistors,” Japanese Journal of Applied Physics, Vol. 48, No. 4, pp. 04C091, Apr., 2009.DOI
9 
T.-C. Chen et al., “Self-heating enhanced charge trapping effect for InGaZnO thin film transistor,” Applied Physics Letters, Vol. 101, No. 4, pp. 042101, Jul., 2012.DOI
10 
C.-Y. Jeong et al., “A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization,” Semiconductor Science and Technology, Vol. 29, No. 4, pp. 045023, Apr., 2014.DOI
11 
D. K. Seo et al., “Drastic improvement of oxide thermoelectric performance using thermal and plasma treatments of the InGaZnO thin films grown by sputtering,” Acta Materialia, Vol. 59, No. 17, pp. 6743-6750, Oct., 2011.DOI
12 
J. Lee et al., “Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress,” IEEE Electron Device Letters, Vol. 36, No. 10, pp. 1047-1049, Oct., 2015.DOI
13 
D. Lee et al., “Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses,” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 33, No. 1, pp. 011202, Jan., 2015.DOI
14 
K. Kise et al., “Self-heating induced instability of oxide thin film transistors under dynamic stress,” Applied Physics Letters, Vol. 108, No. 2, pp. 023501, Jan., 2016.DOI
15 
H. Bae et al., “Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic C-V Measurement,” IEEE Electron Device Letters, Vol. 34, No. 1, pp. 57-59, Jan., 2013.DOI
16 
H. Bae et al., “Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs,” IEEE Electron Device Letters, Vol. 34, No. 12, pp. 1524-1526, Dec., 2013.DOI
17 
S. Lee et al., “Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance-Voltage Characteristics,” IEEE Electron Device Letters, Vol. 31, No. 3, pp. 231-233, Mar., 2010.DOI
18 
B.-S. Yeh, “Modeling and characterization of amorphous oxide semiconductor thin-film transistors,” Ph.D. dissertation, Dept. Electr. Eng. Comput. Sci., Oregon State Univ., Corvallis, OR, USA, 2015.URL
19 
M. Mativenga et al., “Origin of light instability in amorphous IGZO thin-film transistors and its suppression,” Scientific Reports, Vol. 11, No. 1, pp. 14618, Dec., 2021.URL
20 
J. Park et al., “Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors,” Electronics, Vol. 9, No. 1, pp. 119, Jan., 2020.DOI
21 
S. Choi et al., “Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors,” Materials, Vol. 12, No. 19, pp. 3149, Sep., 2019.DOI
22 
S. Choi et al., “Influence of the Gate/Drain Voltage Configuration on the Current Stress Instability in Amorphous Indium-Zinc-Oxide Thin-Film Transistors With Self-Aligned Top-Gate Structure,” IEEE Electron Device Letters, Vol. 40, No. 9, pp. 1431-1434, Jul., 2019.DOI
23 
S.-I. Oh, J.-M. Woo, and J.-H. Jang, “Comparative Studies of Long-Term Ambiance and Electrical Stress Stability of IGZO Thin-Film Transistors Annealed Under Hydrogen and Nitrogen Ambiance,” IEEE Transactions on Electron Devices, Vol. 63, No. 5, pp. 1910-1915, May, 2016.DOI
24 
X. Zhang et al., “P-1.6: Effect of Deposition Condition of Passivation Layer on the Performance of Self-Aligned Top-Gate a-IGZO TFTs,” SID Symposium Digest of Technical Papers, Vol. 49, pp. 535-537, Apr., 2018.DOI
25 
X. D. Huang et al., “Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor,” IEEE Transactions on Electron Devices, Vol. 65, No. 3, pp. 1009-1013, Mar., 2018.DOI
26 
H. Noh et al., “Role of Hydrogen in Active Layer of Oxide-Semiconductor-Based Thin Film Transistors,” Crystals, Vol. 9, No. 2, pp. 75, Jan., 2019.DOI
27 
M. M. Sabri et al., “Hydroxyl radical-assisted decomposition and oxidation in solution-processed indium oxide thin-film transistors,” Journal of Materials Chemistry C, Vol. 3, No. 28, pp. 7499-7505, Jul., 2015.DOI
28 
D. H. Kim et al., “Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponential functions,” Journal of the Society for Information Display, Vol. 25, No. 2, pp. 98-107, Feb., 2017.DOI
29 
S. Choi et al., “Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors,” IEEE Electron Device Letters, Vol. 38, No. 5, pp. 580-583, May, 2017.DOI
30 
G. Li et al., “Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors,” Applied Physics Letters, Vol. 112, No. 25, pp. 253504, Jun., 2018.DOI
31 
J. Rhee et al., “The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress,” Solid-State Electronics, Vol. 140, pp. 90-95, Feb., 2018.DOI
32 
D.-H. Kim et al., “Quantitative Analysis of Positive-Bias-Stress-Induced Electron Trapping in the Gate Insulator in the Self-Aligned Top Gate Coplanar Indium-Gallium-Zinc Oxide Thin-Film Transistors,” Coatings, Vol. 11, No. 10, pp. 1192, Sep., 2021.DOI