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The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

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  4. 10.5573/JSTS.2025.25.2.117
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References

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J. S. Harris, H. Lin, R. Chen, Y. Huo, E. Fei, S. Cho, and T. Kamins, ``MBE growth of GeSn and SiGeSn heterojunction for photonic devices,'' ECS Transactions, vol. 50, no. 9, 601-605, Oct. 2012.DOI
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M. R. M. Atalla, S. Assali, S. Koelling, A. Attiaoui, and O. Moutanabbir, ``High-bandwidth extended-SWIR GeSn photodetectors on silicon achieving ultrafast broadband spectroscopic response,'' ACS Photonics, vol. 9, no. 4, pp. 1425-1433, Mar. 2022.DOI
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S. Xu, W. Wang, Y.-C. Huang, Y. Dong, S. Masudy-Panah, H. Wang, X. Gong, and Y.-C. Yeo, ``High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate,'' Optics Express, vol. 27, no. 4, pp. 5798-5813, Feb. 2019.DOI
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N. Wang, C. Xue, F. Wan, Y. Zhao, G. Xu, Z. Liu, J. Zheng, Y. Zuo, B. Cheng, and Q. Wang, ``High-Performance GeSn Photodetector Covering All Telecommunication Bands,'' IEEE Photonics Journal, vol. 13, no. 2, Apr. 2021.DOI
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J. Lee, I. H. Cho, D. Seo, S. Cho, and B.-G. Park, ``Crystallization and Characterization of GeSn Deposited on Si with Ge Buffer Layer by Low-temperature Sputter Epitaxy,'' Journal of Semiconductor Technology and Science, vol. 16, no.6, pp. 854-859, Dec. 2016.DOI
27 
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