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References

1 
Jo Min Gi, 2018, Effects of substrate bias voltage on GaN power FET characteristicsGoogle Search
2 
ROHM semiconductor , 2018, ROHM technical reportGoogle Search
3 
Ahn Jung-Hoon, Lee Byoung-Kuk, Kim Jong-Soo, 2014, Comparative Performance Evaluation of Si MOSFET and GaN FET Power System, KIPE, Vol. 19, No. 3DOI
4 
Kim Dong-Sik, Joo Dong-Myoung, Lee Byoung-Kuk, Kim Jong-Soo, 2016, Design and Implementation of an Optimal Hardware for a Stable Operating of Wide Bandgap Devices, KIEE, Vol. 65, No. 1DOI
5 
Jeong Jea-Woong, Kim Hyun-Bin, Kim Jong-Soo, Kim Nam-Joon, 2017, A Study on the Efficiency Prediction of Low-Voltage and High-Current dc-dc Converters Using GaN FET-based Synchronous Rectifier, KIPE, Vol. 22, No. 4Google Search
6 
Kim Minki, Park Youngrak, Park Junbo, Jung DongYun, Jun Chi-Hoon, Ko Sang Choon, 2017, Pulse-Mode Dynamic Ron Measurement of Large-Scale High-Power AlGaN/ GaN HFET, ETRI Journal, Vol. 39, No. 2DOI
7 
Park Sae Hee, Seong Ho-Jae, Hyun Seung-Wook, Won Chung-Yuen, 2017. 11, Analysis of Switch Device Losses through Threshold Voltage and Miller Plateau Voltage, KIPE, Vol. 39, No. 2, pp. 133-134Google Search