| Title |
A Study on Morphological Changes According to Metal Mask Size and Process Time in Etching Perovskite Thin Films for Lighting Devices Using Hydrogen Atmospheric Pressure Plasma |
| Authors |
Kyoung-Bo Kim ; Jongpil Lee ; Moojin Kim |
| DOI |
http://doi.org/10.5207/JIEIE.2023.37.6.019 |
| Keywords |
Etching; Hydrogen atmospheric pressure plasma; Metal mask; Perovskite |
| Abstract |
In this study, we fabricated small-hole (SH: 0.5mm diameter) and very large-hole (3mm diameter) masks to etch perovskite semiconductor materials composed of organic and inorganic components into a concave shape. To ensure that the mask remained fixed on the sample during etching, magnets were placed on the back of the glass during the experiment. Subsequently, argon and hydrogen were supplied to the high-pressure plasma equipment to generate hydrogen plasma, and the shape of the perovskite semiconductor material was examined by varying the etching time from 1 s to 20min. The etched pattern showed various morphological changes over time, from the center of the mask toward the edges. In the sample where the etching process was performed for 20min, the semiconductor material remaining in the central area consisted of carbon and lead. For complete removal, the etching time should be longer than 20min or additional gas that can remove lead should be supplied to hydrogen-based atmospheric pressure plasma. |