Mobile QR Code QR CODE : Journal of the Korean Institute of Illuminating and Electrical Installation Engineers

Journal of the Korean Institute of Illuminating and Electrical Installation Engineers

ISO Journal TitleJ Korean Inst. IIIum. Electr. Install. Eng.

References

1 
N. Lu, et al., “A review for compact model of thin-film transistors (TFTs),” Micromachines, vol. 9, no. 11, p. 599, 2018.DOI
2 
A. N. Thiessen, et al., “Silicon nanoparticles: Are they crystalline from the core to the surface?,” Chemistry of Materials, vol. 31, no. 3, pp. 678-688, 2019.DOI
3 
G. Signorello, et al, “Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress,” Nature Communications, vol. 5, p. 3655, 2014.DOI
4 
Z. Wu, et al., “Development of InP quantum dot-based light-emitting diodes,” ACS Energy Letters, vol. 5, no. 4, pp. 1095-1106, 2020.DOI
5 
S. Paek, J. K. Lee, and J. Ko, “Synthesis and photovoltaic characteristics of push–pull organic semiconductors containing an electron-rich dithienosilole bridge for solution-processed small-molecule organic solar cells,” Solar Energy Materials and Solar Cells, vol. 120, Part A, pp. 209-217, 2014.DOI
6 
E. H. Jung, et al., “Efficient, stable and scalable perovskite solar cells using poly(3-hexylthiophene),” Nature, vol. 567, pp. 511-515, 2019DOI
7 
G. Pacchioni, “Highly efficient perovskite LEDs,” Nature Reviews Materials, vol. 6, p. 108, 2021.DOI
8 
K. B. Kim, J. P. Lee, and M. Kim, “Perovskite patterning using solution-based wet etching technology and optical sensor device fabrication using this material,” Journal of the Korean Institute of IIIuminating and Electrical Installation Engineers, vol. 36, no. 10, pp. 1-6, 2022.DOI
9 
H. Khachatryan, K. B. Kim, and M. Kim, “CH3NH3PbI3-based perovskite material patterning and thin-film transistor fabrication,” Applied Science and Convergence Technology, vol. 31, no. 1, pp. 23-27, 2022.URL
10 
H. Khachatryan, et al., “Direct etching of perovskite film by electron-beam scanning,” Materials Science in Semiconductor Processing, vol. 90, pp. 171-181, 2019.DOI
11 
H. Khachatryan, et al., “Novel method for dry etching CH3NH3PbI3 perovskite films utilizing atmospheric-hydrogen-plasma,” Materials Science in Semiconductor Processing, vol. 75, pp. 1-9, 2018.DOI
12 
M. Kim, “Atmospheric pressure plasma etching technology for forming circular holes in perovskite semiconductor materials,” Journal of Convergence for Information Technology, vol. 11, no. 2, pp. 10-15, 2021.DOI