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Journal of the Korean Institute of Illuminating and Electrical Installation Engineers

ISO Journal TitleJ Korean Inst. IIIum. Electr. Install. Eng.
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  4. 10.5207/JIEIE.2024.38.4.272
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References

1 
M. Meneghini, L. R. Trevisanello, G. Meneghesso, and E. Zanoni, “A review on the reliability of GaN-based LEDs,” IEEE Trans. Device Mater. Reliab., vol. 8, no. 2, pp. 323- 331, 2008.DOI
2 
G. Li, et al., “GaN-based llight-emitting diodes on various substrates: A critical review,” Rep. Prog. Phys., vol. 79, no. 5, 2016.DOI
3 
J. Han, et al., “AlGaN/GaN quantum well ultraviolet light emitting diodes,” Appl. Phys. Lett., vol. 73, no. 12, pp. 1688- 1690, 1998.DOI
4 
V. W. Lee, N. Twu, and I. Kymissis, “Micro-LED technologies and applications,” J. Inf. Disp., vol. 32, no. 6, pp. 16-23, 2016.DOI
5 
Y. Huang, E. L. Hsiang, M. Y. Deng, and S. T. Wu, “Mini- LED, micro-LED and OLED displays: Present status and future perspectives,” Light Sci. Appl., vol. 9, no. 105, 2020.DOI
6 
H. He, et al., “Monolithic integration of GaN-based transistors and micro-LED,” Nanomater., vol. 14, no. 6, 2024.DOI
7 
A. R. Anwar, et al., “Recent progress in micro-LED-based display technologies,” Laser Photonics Rev., vol. 16, no. 6, 2022.DOI
8 
Y. Liu, et al, “High-brightness InGaN/GaN micro-LEDs with secondary peak effect for displays,” IEEE Electron Device Lett, vol. 41, no. 9, pp. 1380-1383, 2020.DOI
9 
H. Yu, et al., “AlGaN-based deep ultroviolet micro-LED emitting at 275nm,” Opt. Lett, vol. 46, no. 13, pp. 3271-3274, 2021.DOI
10 
C.-Y. Chang, et al.,　“An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes,” IEEE J. Electron Devices Soc., vol. 8, pp. 346-349, 2020.DOI
11 
W.-H. Jang, K.-S. Seo, and H.-Y. Cha, “P-GaN gated AlGaN/GaN e-mode HFET fabricated with selective GaN etching process,” J. Semicond. Technol. Sci., vol. 20, no. 6, pp. 485-490, 2020.DOI
12 
J. O. Song, J. S. Ha, and T. Y. Seong, “Ohmic-contact technology for GaN-based light-emitting diodes: Role of P-type contact,” IEEE Trans. Electron Devices, vol. 57, no. 1, pp. 42-59, 2010.DOI
13 
C. Liu, Y. Cai, X. Zou, and K. M. Lau “Low-leakage hign-breakdown laterally integrated HEMT-LED via n-GaN electrode,” IEEE Photonics Technol. Lett., vol. 28, no. 10, pp. 1130-1133, 2016.DOI