| Title |
Comparative Performance Evaluation of Si MOSFET and GaN FET Power System |
| Authors |
Jung-Hoon Ahn ; Byoung-Kuk Lee ; Jong-Soo Kim |
| DOI |
10.6113/TKPE/2014.19.3.283 |
| Keywords |
gallium nitride FET (GaN FET); wide band gap device (WBG device); high electron mobility transistor (HEMT); power system; phase-shift full bridge converter (PSFB converter) |
| Abstract |
This paper carries out a series of analysis of power system using Gallium Nitride (GaN) FET which has wide band gap (WBG) characteristics comparing to conventional Si MOSFET-used power system. At first, for comparison of each semiconductor device, the switching-transient parameter is quantitatively extracted from released information of GaN FET. And GaN FET model which reflect this dynamic property is configured. By using this model, the performance of GaN FET is analyzed comparing to Si MOSFET. Also, in order to enable a representative assessment on the power system level, Si MOSFET and GaN FET are applied to the most common structure of power system, full-bridge, and each power systems are compared based on various criteria, such as performance, efficiency and power density. The entire process is verified with the aid of mathematical analysis and simulation. |