| Title |
Fabrication of 5,000V, 4-Inch Light Triggered Thyristor using Boron Diffusion Process and its Characterization |
| Authors |
Kun-Sik Park ; Doohyung Cho ; Jongil Won ; Byungha Lee ; Youngseok Bae ; Insu Koo |
| DOI |
10.6113/TKPE.2019.24.6.411 |
| Keywords |
HVDC(High Voltage Direct Current); LTT(Light Triggered Thyristor); Power devices; Pulsed power system |
| Abstract |
Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (VDRM) of 6,500 V. They drove an average on-state current (ITAVM) of 2,270 A, peak nonrepetitive surge current (ITSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I2T) of 17 MA2s without damage to the device. |