| Title |
Gate Driver for Power Cell Driving of Bipolar Pulsed Power Modulator |
| Authors |
Seung-Ho Song ; Seung-Hee Lee ; Hong-Je Ryoo |
| DOI |
10.6113/TKPE.2020.25.2.87 |
| Keywords |
Bipolar pulse; Gate driver circuit; High voltage; Pulsed power modulator |
| Abstract |
This study proposes a gate driver that operates semiconductor switches in the bipolar pulsed power modulator. The proposed gate driver was designed to receive isolated power and synchronized signals through the gate transformer. The gate circuit has a separate delay in the on-and-off operation to prevent a short circuit between the top and bottom switches of each leg. On the basis of the proposed gate circuit, a bipolar pulsed power modulator prototype with a 2.5 kV/100 A rating was developed. Finally, the bipolar pulsed power modulator was tested under resistive load and plasma reactor load conditions. It is verified that the proposed gate driver can be applied to a bipolar pulsed power modulator. |