| Title |
Power Cell-based Pulsed Power Modulator with Fast Rise Times |
| Authors |
Seung-Hee Lee ; Seung-Ho Song ; Hong-Je Ryoo |
| DOI |
10.6113/TKPE.2021.26.1.25 |
| Keywords |
Pulsed power modulator; High voltage; Fast rise time |
| Abstract |
This paper describes the design of a power cell-based pulsed power modulator with fast rise times. The pulse-generating section of the pulse power modulator is a series stack of power cells. Each power cell is composed of a storage capacitor, a pulse switch, and a bypass diode. When the pulse switches are turned on, the capacitors are connected in series and the sum of voltages is applied to the load. For output pulses with fast rise times, an IGBT with fast turn-on characteristics is adopted as a pulse switch and the optimized gate driving method is used. Pspice simulation is performed to account for the gate driving method. A 10 kV, 12-power cell-based pulsed power modulator is tested under resistive load and plasma reactor load. The rise times of output pulses less than 20 ns are confirmed, showing that the pulsed power modulator can be effectively applied to pulsed power applications with fast rise times. |