| Title |
Bootstrap Circuit Design for Application of SiC MOSFET Device with Kelvin Source to Power Conversion System for Home Appliances |
| DOI |
https://doi.org/10.6113/TKPE.2024.29.2.132 |
| Keywords |
WBG(Wide-Band Gap) device; SiC MOSFET(Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor); Bootstrap; Shunt sensing |
| Abstract |
Research on wide bandgap(WBG) devices, such as silicon carbide metal oxide semiconductor field effect transistor(SiC MOSFET) and gallium nitride high-electron mobility transistor, has been recently conducted. The use of WBG devices in power conversion systems for home appliances has been increasingly reconsidered. Most home appliance systems use bootstrap circuits and shunt resistors to reduce costs. The bootstrap circuit with shunt resistors cannot be applied to a SiC MOSFET driving circuit in which a Kelvin source exists. In this paper, a bootstrap circuit design method for SiC MOSFET driving in the presence of shunt resistors and Kelvin sources was proposed. The validity of the proposed method was verified by a 7 kW grid-connected converter. |