| Title |
Gate Driving Circuit for Improving the Transient of Pulsed Power Modulator |
| Authors |
Yoon-Seok Lee ; Woo-Cheol Jeong ; Joo-Young Lee ; Hong-Je Ryoo |
| DOI |
https://doi.org/10.6113/TKPE.2025.30.5.435 |
| Keywords |
Gate driver circuit; High voltage; Pulsed power modulator; Self-turn on |
| Abstract |
This study proposes a new gate driver for high-voltage semiconductor switches in solid-state pulsed power modulators. The driver uses a gate transformer with a single high-voltage cable loop on the primary side. It applies bipolar pulses to the gate circuit, delivering a synchronized signal and isolated power. The driver keeps the gate voltage negative during the turn-off period to ensure stable operation during high-voltage switching transients. It does not require a separate isolated power source to generate negative voltage. The study compares the proposed circuit with a conventional gate driver. A prototype modulator is built using the proposed design, and experiments with resistive load confirm its reliable performance. |