| Title |
The Study for Extending EV Charger Lifetime by Advanced SiC Power MOSFET Packaging Technology |
| Authors |
Kwok Wai Ma ; Dinesh Palaniappan ; Simon Kim |
| DOI |
https://doi.org/10.6113/TKPE.2026.31.2.115 |
| ISSN |
1229-2214(pISSN), 2288-6281(eISSN) |
| Keywords |
EV Charger; SiC MOSFET; Power Cycling Lifetime; Interconnection Technology; Copper Metallization |
| Abstract |
SiC MOSFET power semiconductor technology, which involves fast switching speed and low losses, enables high-efficiency and high-power density operations in the fast chargers of DC Electric Vehicles (EVs). But, given the repetitive on/off cycles during charging operations, the SiC MOSFET used in fast DC-EV chargers is under high mechanical stress, causing package fatigue and wearout failure. The problem is further exacerbated by certain charging strategies, e.g., pulse charging, which further increase the mechanical stress on SiC power devices during charging. Even with substantial derating of device junction temperature, the power cycling (PC) lifetime of SiC MOSFETcan only be just a few years. The latest advancements in SiC MOSFET packaging technology have addressed this problem by significantly improving the PC lifetime. New interconnection technology that uses copper metallization and strengthened chips increases the PC lifetime of the SiC MOSFET module by more than 22 times. This study provides an unprecedented robust SiC MOSFET module that substantially extends the operational lifetime of fast DC-EV chargers even under the demanding charging profile of pulse charging. |