| Title |
Dead Time Optimization Scheme of GaN FET-based Bidirectional Buck-Boost Converter for Battery Formation System |
| Authors |
Go-Woon Heo ; Jong-Hun Lim ; Je-Yeong Lim ; Dong-Hwan Kim ; Byoung-Kuk Lee |
| DOI |
https://doi.org/10.6113/TKPE.2024.29.5.383 |
| Keywords |
Battery formation system; Gallium nitride (FET) power devices; Dead time optimization |
| Abstract |
In this paper, we propose a method that optimizes the dead time of gallium nitride (GaN) field effect transistor (FET)-based bidirectional converters for battery formation systems. The proposed method enhances the efficiency of the converter by controlling the optimal dead time in real time according to the channel current. The theoretical dead time is mathematically derived from the device characteristics and the mechanism for charging and discharging the device’s internal parasitic capacitors during dead time. Depending on the channel current, the charging and discharging rate of the parasitic capacitor varies, and an optimal dead time is derived to increase the performance of the battery formation system for each. The optimal dead time can reduce the interval of the reverse conduction voltage drop, which can reduce the losses and improve the system efficiency. The feasibility of the proposed method is validated by comparing the conventional fixed and proposed variable dead time experimental results at load currents from 10 A to 100 A by using a GaN FET-based battery formation system. |