Mobile QR Code QR CODE : The Korean Institute of Power Electronics
Title A Gate Driver Circuit for Gallium-Nitride HEMT with Over-Current and Over-Voltage Protection
Authors Jong-Hun Kim ; Seogyong Jeong ; Myeong-Ho Kim ; Min-Sik Kim ; Dong-Chan Lee ; Mingyu Jeong ; Se-Un Shin
DOI https://doi.org/10.6113/TKPE.2025.30.4.307
Page pp.307-316
ISSN 1229-2214
Keywords GaN HEMT; Wide bandgap devices; Gate drivers; Protection circuits; Layout optimization